April 17, 2019

NTHU Scientists Take a “Spin” onto the Next Generation MRAM

HSINCHU, Taiwan–(BUSINESS WIRE)–Magnetoresistive random access memory (MRAM) is the forerunning candidate for the next generation digital technology. However, manipulating MRAM efficiently and effectively has been challenging. A revolutionary breakthrough was recently achieved by an interdisciplinary research team based at National Tsing Hua University (NTHU) in Taiwan, led by Prof. Chih-Huang Lai and Prof. Hsiu-Hau Lin. By adding a layer of platinum, only a few nanometers thick, it generates


Leave Comment


Your Name *
Your Email *
Your Website

Comment *